My favorite paper from the ISSCC processor session describes an adaptive clocking technique implemented in AMD’s 28nm Steamroller core that compensates for power supply noise. Initial results show a 10-20% decrease in power consumption from reducing the voltage, with no loss in performance. This elegant technique is likely to be adopted across AMD’s entire product line including GPUs, x86 CPUs, ARM-based CPUs, and other critical blocks in highly integrated SoCs.
Highlights of the upcoming 2012 ISSCC include the first 22nm disclosures from Intel and several SoC papers from AMD, Cavium Networks and Oracle. Looking out further to the future, the clear focus is power consumption. There are several papers from Intel on low-power logic, one from IBM discussing 3D integration of embedded DRAM and a third from Fujitsu on system level power for the K supercomputer.
Nvidia’s Kal-El sports a novel 5th ‘companion’ core to lower idle power. We look at the trade-offs and benefits to this approach and explain why it will be a strong tablet SoC, but only an incremental gain for smartphones.
Enthusiasts and engineers know cooling is vital; it raises frequency and dramatically lowers power by reducing CPU or GPU temperatures. The world’s fastest supercomputer shows that thermal management can increase CPU performance/watt by 20% and cooling is critical for 3D integration and Moore’s Law.
Intel’s Sandy Bridge ISSCC paper discusses a number of challenges they will eventually impact most vendors. The novel architectural choices and circuit design solutions that they describe give insight into current and future products from Intel, but also the general direction of the industry. The overarching theme is taking advantage of Moore’s Law at 32nm and beyond, which entails considerable attention to design complexity, process variation, power efficiency and validation.
As Moore’s Law continues, each new generation of semiconductor manufacturing is ushered in by new challenges, hurdles and solutions. At ISSCC 2011, a panel with speakers from Global Foundries, IBM, Intel, Renesas and TSMC discussed manufacturing and circuit design interactions at the upcoming 22nm node. Industry leaders have reached a broad technical consensus, although with several subtle differences. This report explores the key challenges and solutions at 22nm; focusing on variation and co-optimization between design and manufacturing. As a result of the needed collaboration, understanding of physical design and manufacturing is even more critical to cutting edge chip development and achieving good performance, power and yields.
The integration predicted by Moore’s Law is fundamentally driven by advances in semiconductor manufacturing. One of the key challenges is scaling to ever finer and denser geometries, while improving the performance of transistors. IEDM and the VLSI Symposium are the premier venues to discuss the challenges and opportunities for future process technologies. No commercial 22nm process technologies were presented at IEDM 2010, but in the last two years a number of advances have been disclosed, both for high performance and low power applications. This article describes several 32nm and 28nm nodes from Intel, IBM’s Common Platform and TSMC, plus novel applications such as IBM’s 32nm eDRAM that have been disclosed at IEDM and VLSI.
The continuing pace of chip level feature miniaturization – Moore’s Law – has resulted in the doubling of the number of transistors per unit area approximately every couple of years. Chip designers have been provided with a plethora of transistor options to choose from in order to optimize for a given constraint. New materials with higher dielectric constants such as hafnium-based high-k gate oxide materials, along with metal gate electrodes, decrease leakage and boost drive current. Strained silicon engineering enables higher transistor switching speeds. Different transistor designs featuring multiple threshold voltages optimize for low power or high performance applications.
Introduction The 2005 International Electron Devices Meeting (IEDM) was held in the Hilton Hotel on Connecticut Ave in Washington DC from December 4 through December 7. In the four day period, 1800 attendees from all over the world listened to and examined materials presented on the state of the art in the field of semiconductor […]