IEDM 2010 article online

Article: IEDM 2010 Process Technology Update
By: David Kanter (dkanter.delete@this.realworldtech.com), February 15, 2011 9:37 am
Room: Moderated Discussions
Ricardo B (ricardo.b@xxxxx.xx) on 2/15/11 wrote:
---------------------------
>Nice article, David.
>Thanks
>
>«The high voltage I/O transistors are even larger and are formed with a gate oxide
>that is 4-7X thicker to deal with the higher voltages in the 1.8-3.3V range. This
>is a substantial improvement over the 45nm process, which did not have 3.3V transistors,
>as PCI-Express and other interconnects use 3.3V signaling.»
>
>PCIe is LVDS, thus 2.5V suffice.
>Maybe you were thinking of PCI-X?

Actually I was just looking for an illustrative example...but you are correct, PCI-E is lower voltage.

DK
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TopicPosted ByDate
IEDM 2010 article onlineDavid Kanter2011/02/15 01:59 AM
  IEDM 2010 article onlineRicardo B2011/02/15 05:54 AM
    IEDM 2010 article onlineDavid Kanter2011/02/15 09:37 AM
      IEDM 2010 article onlineRicardo B2011/02/15 03:03 PM
  IEDM 2010 article onlineslacker2011/02/15 06:15 PM
    IEDM 2010 article onlineIntelUser20002011/02/15 06:54 PM
    IEDM 2010 article onlineDavid Kanter2011/02/15 08:49 PM
      IEDM 2010 article onlineDavid Hess2011/02/16 02:40 AM
      IEDM 2010 article onlineRicardo B2011/02/16 07:01 AM
      IEDM 2010 article onlineIntelUser20002011/02/17 09:21 AM
        Answer: 8umslacker2011/02/17 10:01 AM
  IEDM 2010 article onlinesomeone2011/02/17 09:14 AM
  IEDM 2010 article onlineiz2011/02/17 06:31 PM
    IEDM 2010 article onlineiz2011/02/17 07:04 PM
      Also fixedDavid Kanter2011/02/17 07:47 PM
    IEDM 2010 article onlineDavid Kanter2011/02/17 07:43 PM
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