By: Moritz (better.delete@this.not.tell), June 22, 2011 4:48 am
Room: Moderated Discussions
I understand that heat increases tunneling and the resistance of metal,
but why of semiconductors?
I guess most dopant's are available for movement at below 0°C (N_A/D~=n_A/D) , but isn't the rule, that more electrons get available with temperature? what about NTC-Thermistors ? Are there more electrons available, but the effect is off-set by collisions, leakage, ?
If they want more flops/watt, they could also reduce the voltage. That would require a slight drop in clock-rate but reduce power disproportionately.
but why of semiconductors?
I guess most dopant's are available for movement at below 0°C (N_A/D~=n_A/D) , but isn't the rule, that more electrons get available with temperature? what about NTC-Thermistors ? Are there more electrons available, but the effect is off-set by collisions, leakage, ?
If they want more flops/watt, they could also reduce the voltage. That would require a slight drop in clock-rate but reduce power disproportionately.
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