David Kanter (dkanter.delete@this.realworldtech.com) on April 23, 2013 8:14 am wrote:
> I just posted a new article online:
>
> Graphics is a focal point of the upcoming Haswell platform, necessitating a high bandwidth memory
> solution. To deliver high performance Intel is returning to the DRAM market, which it exited in
> 1985. The memory that ships with Haswell will be a custom embedded DRAM mounted in the package and
> manufactured on a variant of Intel’s 22nm process. By avoiding the commodity memory market, Intel
> will preserve high margins by cannibalizing discrete GPUs and dedicated graphics memory.
>
> http://www.realworldtech.com/intel-dram/
>
> As always, I encourage discussion, so let the fun begin!
>
> David


"Intel uses a trench capacitor to store the actual data bits. Unlike IBM’s work where the trench is dug into the silicon substrate, Intel’s eDRAM forms a high aspect ratio trench above the transistors in the metal interconnects and interlayer dielectrics and filled with a metal-insulator-metal capacitor."

Hmmm? By definition a trench capacitor is a cap built deep down into the substrate

Intel's DRAM cell cap would be a crown or stacked capacitor.