someone (someone.delete@this.somewhere.com) on April 23, 2013 12:11 pm wrote:
> David Kanter (dkanter.delete@this.realworldtech.com) on April 23, 2013 8:14 am wrote:
> > I just posted a new article online:
> >
> > Graphics is a focal point of the upcoming Haswell platform, necessitating a high bandwidth memory
> > solution. To deliver high performance Intel is returning to the DRAM market, which it exited in
> > 1985. The memory that ships with Haswell will be a custom embedded DRAM mounted in the package and
> > manufactured on a variant of Intel’s 22nm process. By avoiding the commodity memory market, Intel
> > will preserve high margins by cannibalizing discrete GPUs and dedicated graphics memory.
> >
> > http://www.realworldtech.com/intel-dram/
> >
> > As always, I encourage discussion, so let the fun begin!
> >
> > David
>
>
> "Intel uses a trench capacitor to store the actual data bits. Unlike IBM’s work where the trench is dug
> into the silicon substrate, Intel’s eDRAM forms a high aspect ratio trench above the transistors in the
> metal interconnects and interlayer dielectrics and filled with a metal-insulator-metal capacitor."
>
> Hmmm? By definition a trench capacitor is a cap built deep down into the substrate
>
> Intel's DRAM cell cap would be a crown or stacked capacitor.

Here's the way the advance program describes it:

"A high aspect-ratio, 3-D metal-insulator-metal capacitor trench has been integrated into the ultra-low-k interlayer dielectric and Cu metallization used for interconnect stacks."

I just got confused by the usage of teh 'capacitor trench' as opposed to 'trench capacitor'.

DK