By: Joel (joel.hruska.delete@this.gmail.com), April 23, 2015 12:38 pm
Room: Moderated Discussions
If I can ask a relatively baby question:
A few years ago, Intel demonstrated its efforts with near-threshold voltage and indicated it was working to build chips that could operate in this mode as a means of reducing idle and low-use power consumption. The results looked impressive, if the tech worked.
Would a shift to III-V materials and dropping voltage down into the 0.5V area kill the need for NTV parts -- or is that a technology that could still be deployed, even if the industry moves away from Si and to some of these other materials? Does using InGaAs or SiGe make NTV easier or more difficult to deploy?
A few years ago, Intel demonstrated its efforts with near-threshold voltage and indicated it was working to build chips that could operate in this mode as a means of reducing idle and low-use power consumption. The results looked impressive, if the tech worked.
Would a shift to III-V materials and dropping voltage down into the 0.5V area kill the need for NTV parts -- or is that a technology that could still be deployed, even if the industry moves away from Si and to some of these other materials? Does using InGaAs or SiGe make NTV easier or more difficult to deploy?
