By: someone (someone.delete@this.somewhere.com), January 16, 2018 2:10 pm
Room: Moderated Discussions
David Kanter (dkanter.delete@this.realworldtech.com) on January 15, 2018 9:57 am wrote:
> Welcome to a new year everyone, I have a new article for your Monday morning reading!
>
> Intel’s 22FFL (FinFET Low-power) is a variant of their existing 22nm process that is aimed at low-cost,
> extremely low-power, and analog/RF applications. 22FFL relaxes the ground rules to reduce the need
> for double patterning, thereby cutting costs. At the same time, Intel’s engineers essentially backported
> the second and third generation FinFETs from the 10nm and 14nm processes to 22FFL, improving performance
> and power efficiency with superior fin geometry and workfunction metals. Intel also created a large
> library of digital and analog transistors and passive components.
>
> The full article is at https://www.realworldtech.com/intel-22ffl-process/.
>
> I'm really curious to see what Intel ends up manufacturing on 22FFL. It looks like a very nice process.
>
> David
Page 3
"SRAMs typically use low-leakage, high VT transistors, so Intel designed a new set of three SRAM bit-cells for the 22FFL process. A high-density 0.87µm2 cell and a high-current 0.107µm2 cell use the regular low-power transistors."
I presume you mean 0.087 um2 high density cell.
"Like the analog transistors, I/O transistors are also larger footprint, with 216nm and 270nm contacted gate pitches. However, they use a thick gate oxide to support stable 1.2V, 1.5V, and 1.8V operation for off-chip interfaces."
LOL, "thick oxide device" supports up to 1.8 V. Different world than mine. :-)
> Welcome to a new year everyone, I have a new article for your Monday morning reading!
>
> Intel’s 22FFL (FinFET Low-power) is a variant of their existing 22nm process that is aimed at low-cost,
> extremely low-power, and analog/RF applications. 22FFL relaxes the ground rules to reduce the need
> for double patterning, thereby cutting costs. At the same time, Intel’s engineers essentially backported
> the second and third generation FinFETs from the 10nm and 14nm processes to 22FFL, improving performance
> and power efficiency with superior fin geometry and workfunction metals. Intel also created a large
> library of digital and analog transistors and passive components.
>
> The full article is at https://www.realworldtech.com/intel-22ffl-process/.
>
> I'm really curious to see what Intel ends up manufacturing on 22FFL. It looks like a very nice process.
>
> David
Page 3
"SRAMs typically use low-leakage, high VT transistors, so Intel designed a new set of three SRAM bit-cells for the 22FFL process. A high-density 0.87µm2 cell and a high-current 0.107µm2 cell use the regular low-power transistors."
I presume you mean 0.087 um2 high density cell.
"Like the analog transistors, I/O transistors are also larger footprint, with 216nm and 270nm contacted gate pitches. However, they use a thick gate oxide to support stable 1.2V, 1.5V, and 1.8V operation for off-chip interfaces."
LOL, "thick oxide device" supports up to 1.8 V. Different world than mine. :-)