By: David Hess (davidwhess.delete@this.gmail.com), January 16, 2018 6:41 pm
Room: Moderated Discussions
someone (someone.delete@this.somewhere.com) on January 16, 2018 1:10 pm wrote:
>
> "Like the analog transistors, I/O transistors are also larger footprint, with
> 216nm and 270nm contacted gate pitches. However, they use a thick gate oxide
> to support stable 1.2V, 1.5V, and 1.8V operation for off-chip interfaces."
>
> LOL, "thick oxide device" supports up to 1.8 V. Different world than mine. :-)
I have had to explain why physical interfaces are not amendable to integration too many times.
>
> "Like the analog transistors, I/O transistors are also larger footprint, with
> 216nm and 270nm contacted gate pitches. However, they use a thick gate oxide
> to support stable 1.2V, 1.5V, and 1.8V operation for off-chip interfaces."
>
> LOL, "thick oxide device" supports up to 1.8 V. Different world than mine. :-)
I have had to explain why physical interfaces are not amendable to integration too many times.
