MRAM at VLSI 2018

Article: MRAM Research at VLSI 2018
By: David Kanter (, November 19, 2018 2:40 pm
Room: Moderated Discussions
Here's my second quick article from VLSI 2018. My first article focused on machine learning accelerators, while this second article is on emerging memories - specifically MRAM.

At VLSI 2018, researchers from TDK and TSMC described advances in Magneto-resistive memory (MRAM). TDK focused on new materials to improve writing for low-voltage MRAM cells at small geometries. A team from TSMC showcased circuit techniques to improve read performance of MRAM arrays despite process variability and a small read window.

While MRAM is in production with Everspin, there is still a huge amount of research around the basics. I hope to write an additional article about MRAM in the future, since there are so many idiosyncracies around new memories.

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TopicPosted ByDate
MRAM at VLSI 2018David Kanter2018/11/19 02:40 PM
  MRAM for microcontrollersPaul A. Clayton2018/11/19 06:08 PM
    MRAM for microcontrollersTapa2018/11/19 11:06 PM
      MRAM for microcontrollersDavid Kanter2018/11/26 12:58 AM
        MRAM for microcontrollersanon2018/11/26 06:45 AM
    MRAM for microcontrollerskonrad Schwarz2019/08/25 10:40 AM
  MRAM at VLSI 2018Hamza Khan2019/06/12 09:20 PM
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