Report from IEDM 2003 Online

Article: Coverage of IEDM 2003: Day 1
By: David Wang (dwang.delete@this.realworldtech.com), December 9, 2003 8:00 pm
Room: Moderated Discussions
David Kanter (dkanter@realworldtech.com) on 12/9/03 wrote:
---------------------------
>David,
>
>Did any of the presentations on strained silicon or high-K gate dielectrics give numbers on performance improvements?
>
>David

Intel claims that its method of strained channel improves drive current by 25% compared to non-strained approach.

High-K is a bit farther away, not quite ready for commercialization yet. TI says that HfO2 is the wrong material to use, and HfSiON is instead the correct material to use. Motorola also had a paper on Hi-K gate.

Day 2 coverage.
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