Article: Coverage of IEDM 2003: Day 1
By: David Kanter (dkanter.delete@this.realworldtech.com), December 9, 2003 8:42 pm
Room: Moderated Discussions
>Intel claims that its method of strained channel improves drive current by 25% compared to non-strained approach.
>
>High-K is a bit farther away, not quite ready for commercialization yet. TI says
>that HfO2 is the wrong material to use, and HfSiON is instead the correct material
>to use. Motorola also had a paper on Hi-K gate.
>
>Day 2 coverage.
That sounds good, it would be quite interesting to hear about the pros and cons of each approach, since I clearly don't know them.
David
>
>High-K is a bit farther away, not quite ready for commercialization yet. TI says
>that HfO2 is the wrong material to use, and HfSiON is instead the correct material
>to use. Motorola also had a paper on Hi-K gate.
>
>Day 2 coverage.
That sounds good, it would be quite interesting to hear about the pros and cons of each approach, since I clearly don't know them.
David