Coverage of IEDM 2003: Day 1

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Yet to Come on Tuesday

  • AMD discloses that its yield problem on the 130nm SOI process was due to the integration of Low-K materials into the process rather than SOI.
  • Intel submits a late paper in session 11, listed as 11.6 that discloses details about its use of strained silicon in its upcoming 90nm process technology.
  • A whole bunch of memory technologies in research stage. Phase change memory, polymer memory, FeRAM.

For continuing IEDM 2003 coverage, click here.

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