Coverage of IEDM 2003: AMD and Intel on Day 2

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Yet To Come

Yet to Come: Remainder of Day 2 summary and Day 3:

1. Intel studies multibit errors in SRAMS
2. Recent developments in DRAM, Flash, and MRAM technology

References

[1] Ghani, T. et al. “A 90nm High Volume Manufacturing Logic Technology Featuring Novel 45nm Gate Length Strained Silicon CMOS Transistors.” IEDM 2003. http://www.intel.com/research/downloads/Strained-Si-paper-IEDM-1203.pdf (Paper)

[2] Ghani, T. et al. “A 90nm High Volume Manufacturing Logic Technology Featuring Novel 45nm Gate Length Strained Silicon CMOS Transistors.” IEDM 2003. http://www.intel.com/research/downloads/Strained-Si-foils-IEDM-1203.pdf (Foils)

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